AlSiC IGBT Substrates
IGBT E1

the coefficient of thermal expansion is well matched with semiconductor chip and ceramic substrate it has high thermal cycle capacity (compared with copper thermal cycle, it has tens of thousands of

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◆ the coefficient of thermal expansion is well matched with semiconductor chip and ceramic substrate


◇ it has high thermal cycle capacity (compared with copper thermal cycle, it has tens of thousands of thermal cycles, and the module still works well)


◆ high thermal conductivity


◇200W/mK @25℃


◆ low density and light weight


◇ only 1 / 3 of copper


◇2.95-3.05g/cm?


◆ high rigidity and strength


◆ the surface is designed as a plane and an arch


◇ the chip is welded on the plane, and the arch surface is connected with the radiator


◆ standard size or free design size


◆ low cost casting scheme with slots and holes


◆ surface treatment


◇ the surface can be plated with matte nickel, bright nickel, etc


◇ after plating, it can be used as solder resist layer


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